| 发明名称 |
ETCHING SOLUTION, ETCHED ARTICLE AND METHOD FOR ETCHED ARTICLE |
| 摘要 |
An etching solution which contains hydrogen fluoride (HF) and exhibits an etching rate ratio: etching rate for a boron-glass film (BSG) or boron- phosphorus-glass film (BPSG)/etching rate for a thermally oxidized film (THOX) of 10 or more at 25 °C.
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| 申请公布号 |
KR20050100707(A) |
申请公布日期 |
2005.10.19 |
| 申请号 |
KR20057017609 |
申请日期 |
2005.09.20 |
| 申请人 |
DAIKIN INDUSTRIES, LTD. |
发明人 |
KEZUKA TAKEHIKO;SUYAMA MAKOTO;ITANO MITSUSHI |
| 分类号 |
H01L21/308;C03C15/00;C09K13/08;C23F1/16;H01L21/311;(IPC1-7):C09K13/08 |
主分类号 |
H01L21/308 |
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