发明名称 |
Method of making power semiconductor components |
摘要 |
The barrier or buffer layer with first conductivity (15), has a greater thickness than is electrically essential. It is introduced in this form, by diffusion into the single-crystal homogeneous wafer in the base zone (13), before introducing other structures on the wafer top. Once they have been formed, the excess is ground and/or polished off. |
申请公布号 |
EP0969501(B1) |
申请公布日期 |
2005.10.19 |
申请号 |
EP19990112146 |
申请日期 |
1999.06.24 |
申请人 |
SEMIKRON ELEKTRONIK GMBH & CO. KG |
发明人 |
HERZER, REINHARD, DR. HABIL.;NETZEL, MARIO, DR. |
分类号 |
H01L21/329;H01L21/331;H01L21/332 |
主分类号 |
H01L21/329 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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