发明名称 |
HIGH Q INDUCTOR WITH FARADAY SHIELD AND DIELECTRIC WELL BURIED IN SUBSTRATE |
摘要 |
Inductor losses to a semiconducting substrate are eliminated in an IC structure by etching a well into the substrate down to the insulating layer coating the substrate and fabricating a grounded Faraday shield in the shape of elongated segments in the bottom of the well. The well lies directly below the inductor and is optionally filled with cured low-k organic dielectric or air. |
申请公布号 |
KR100522655(B1) |
申请公布日期 |
2005.10.19 |
申请号 |
KR20037009973 |
申请日期 |
2003.07.28 |
申请人 |
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发明人 |
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分类号 |
H01L27/04;(IPC1-7):H01L27/04 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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