| 摘要 |
The invention relates to a semiconductor component which is capable of blocking such as an (IGBT), a thyristor, a GTO or diodes, especially schottky diodes. An insulator profile section ( 10 a , 10 b , 10 c , 10 d , 11 ) provided in the border area of an anode metallic coating ( 1, 31 ) is fixed (directly in the edge area) on the substrate ( 9 ) of the component. The insulator profile has a curved area (KB) and a base area (SB), said curved area having a surface (OF) which begins flat and curves outward and upward in a steadily increasing manner. A metallic coating (MET 1; 30 a , 30 b , 30 c , 30 d , 31 b) is deposited on the surface (OF). Said coating directly follows the surface curvature and laterally extends the inner anode metallic coating. The upper end of the curved metallic coating (MET 1; 30 a , 30 b . . . ) is distanced and insulated from one of these surrounding outer metallic coatings (MET 2; 3 ) by the surrounding base area (SB) of the insulator profile ( 10 a , . . . , 11 ) such that an extensively constant course of the line of force which evades extreme values results between both metallic coatings ( 1, 31 , MET 1; 3 , MET 2 ) when reverse voltage or blocking voltage is applied between the interspaced metallic coatings.
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