发明名称 |
GATE STRUCTURE INCLUDING MODIFIED HIGH-K GATE DIELECTRIC AND METAL GATE INTERFACE |
摘要 |
A method of fabricating a gate of a semiconductor device is provided. In an embodiment, the method includes forming a gate dielectric layer on a semiconductor substrate. An interface layer is formed on the gate dielectric layer. In an embodiment, the gate dielectric layer includes HfO2 and the interface layer includes Hf—N. A work function metal layer may be formed on the interface layer. A device is also provided.
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申请公布号 |
US2010109098(A1) |
申请公布日期 |
2010.05.06 |
申请号 |
US20080339990 |
申请日期 |
2008.12.19 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIN SIMON SU-HORNG;YANG CHI-MING;CHERN CHYI-SHYUAN;LIN CHIN-HSIANG |
分类号 |
H01L29/51;H01L21/3205;H01L21/336;H01L21/4763;H01L29/49 |
主分类号 |
H01L29/51 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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