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发明名称
能够防止湿式清洁程序导致之损坏的半导体元件之制造方法
摘要
本发明揭露一种半导体元件之制造方法,其能够防止层间绝缘层在湿式清洗制程期间受到损坏。尤其,该方法包含下列步骤:在基板上形成许多导电结构;然后在许多导电结构上形成蚀刻停止层和可流动绝缘层;在可流动绝缘层上形成光阻图案;藉由使用光阻图案当作蚀刻遮罩,蚀刻可流动绝缘层,而形成许多接触孔洞,因此会曝露出部分的蚀刻停止层;在接触孔洞上形成至少一个障壁层;移除该至少一个障壁层和位在接触孔洞的各个底部之蚀刻停止层,因此曝露出基板;及清洗接触孔洞。
申请公布号
TW200534389
申请公布日期
2005.10.16
申请号
TW093117123
申请日期
2004.06.15
申请人
海力士半导体股份有限公司
发明人
李圣权;李敏硕
分类号
H01L21/30
主分类号
H01L21/30
代理机构
代理人
何金涂;林荣琳
主权项
地址
韩国
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