发明名称 PHASE SHIFT MASK BLANK, PHASE SHIFT MASK AND METHOD FOR TRANSFERRING PATTERN
摘要 <P>PROBLEM TO BE SOLVED: To provide a phase shift mask blank which can be easily processed to obtain transmittance, reflectance and a phase with higher accuracy, and to provide a phase shift mask using the blank and a method for transferring a pattern. <P>SOLUTION: The phase shift mask blank is a multilayer phase shift mask blank which has a film mainly having a light absorbing function on a substrate and has one or more layers of films mainly having a phase shift function thereon. The film having the light absorbing function contains a group 4A metal, with the metal content higher in the upper part of the film than in the lower part. When the phase shift mask blank is processed into a phase shift mask, the light absorbing film is easily detected during dry etching in a drying etching process and selectivity against a substrate is advantageously obtained, which results in high-accuracy processing. Thus, a mask having the transmittance and a phase shift with higher accuracy can be obtained, and thereby, a larger focal depth can be kept in photolithography using the mask. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005284213(A) 申请公布日期 2005.10.13
申请号 JP20040102219 申请日期 2004.03.31
申请人 SHIN ETSU CHEM CO LTD;TOPPAN PRINTING CO LTD 发明人 YOSHIKAWA HIROKI;ISHIHARA TOSHINOBU;OKAZAKI SATOSHI;INAZUKI SADAOMI;SAGA TADASHI;OKADA KIMIHIRO;IWAKATA MASAHIDE;HARAGUCHI TAKASHI;FUKUSHIMA YUICHI
分类号 G03F1/32;G03F1/54;G03F1/68;H01L21/027 主分类号 G03F1/32
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