| 摘要 |
<P>PROBLEM TO BE SOLVED: To respectively provide a charged particle beam exposure system by which correction is made at low cost, a substrate for reference of the charged particle beam exposure system, a correcting method of the charged particle beam exposure system, and to provide a manufacturing method of an electronic device. <P>SOLUTION: The charged particle beam exposure system includes an electron gun (a generating source of charged particles) 11, deflectors 17, 18; a wafer stage (a substrate-mounting stand) 21; a correction map M including the dislocation of a first mark U<SP>(i, j)</SP><SB>p, q</SB>, based on a position of the second mark V<SP>(i, j)</SP><SB>m, n</SB>of a reference wafer (the substrate for reference) W<SB>0</SB>which is formed by superposing the second mark group T<SB>i, j</SB>of a chip form, constituted by the second mark V<SP>(i, j)</SP><SB>m, n</SB>on a part of the first mark group S<SB>i, j</SB>of the chip form constituted by the first mark U<SP>(i, j)</SP><SB>p, q</SB>; and a deflection control 32, which controls the deflection amount in the deflectors 17, 18. The charged particles are irradiated to a wafer (the substrate) W, while the deflection control 32 refers to the correction map M and corrects the deflection amount by a percentage of the dislocation. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
