发明名称 |
Multi-passivation layer structure for organic thin-film transistors and method for fabricating the same |
摘要 |
The present invention discloses a multi-passivation layer structure for organic thin-film transistors and a method for fabricating the same by spin coating, inject printing, screen printing and micro-contact on organic thin-film transistors. The multi-passivation layer structure for organic thin-film transistors, comprising: a substrate; a gate layer formed on the substrate; an insulator layer formed on the substrate and the gate layer; an electrode layer formed on the insulator layer; a semiconductor layer formed on the insulator layer and the electrode layer; and a passivation layer formed on the semiconductor layer and the electrode layer, thereby forming a multi-passivation layer structure for organic thin-film transistors.
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申请公布号 |
US2005227407(A1) |
申请公布日期 |
2005.10.13 |
申请号 |
US20040863212 |
申请日期 |
2004.06.09 |
申请人 |
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE |
发明人 |
HSIEH CHENG-CHUNG;HO JIA-CHONG;HU TARNG-SHIANG;LEE CHENG-CHUNG;HUANG LIANG-YING;LIN WEI-LING;HUANG WEN-KUEI |
分类号 |
H01L29/786;H01L21/312;H01L21/336;H01L51/05;H01L51/10;H01L51/40;H01L51/52;(IPC1-7):H01L51/40 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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