| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor capacitive device in which capacitance characteristic high in symmetry can be obtained, and parasitic resistance is reduced. SOLUTION: The semiconductor capacitive device 1 comprises: an upper electrode 12 constituting an MIM (Metal Insulator Metal) capacitance 10; a lower electrode 14; a dielectric 16; an upper electrode 22 constituting an MIM capacitance 20; a lower electrode 24; and a dielectric 26. The upper electrode 12 and the lower electrode 24 are electrically connected together by an interconnect line 32. The lower electrode 14 and the upper electrode 22 are electrically connected together by an interconnect line 34. Then the lower electrode 14 is connected with the interconnect line 34 through a plurality of viahole 40. In the same way, the lower electrode 24 is also connected with the interconnect line 32 through a plurality of the viahole 40. COPYRIGHT: (C)2006,JPO&NCIPI
|
