发明名称 |
Forming a retrograde well in a transistor to enhance performance of the transistor |
摘要 |
A method of forming a retrograde well in a transistor is provided. A transistor structure having a substrate, a gate, and a gate oxide layer between the substrate and the gate is formed. The substrate includes a channel region located generally below the gate. A first dopant is implanted into the channel region. A second dopant is implanted into the substrate to form a doped source region and a doped drain region. A third dopant is implanted into the gate oxide layer. A source/drain anneal is performed to form a source and a drain in the doped source region and the doped drain region, respectively. The source/drain anneal causes a portion of the first dopant in the channel region to be attracted by the third dopant into the gate oxide layer.
|
申请公布号 |
US2005224874(A1) |
申请公布日期 |
2005.10.13 |
申请号 |
US20050148805 |
申请日期 |
2005.06.09 |
申请人 |
CHAKRAVARTHI SRINIVASAN;CHRDAMBARAM PR;BOWEN ROBERT C;BU HAOWEN |
发明人 |
CHAKRAVARTHI SRINIVASAN;CHRDAMBARAM PR;BOWEN ROBERT C.;BU HAOWEN |
分类号 |
H01L21/265;H01L21/336;H01L21/425;H01L29/10;H01L29/78;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/265 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|