| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a gas laser apparatus having high power and long sevice life, and an exposure device which utilizes the gas laser apparatus with high productivity as an exposure optical source, and to provide a method of manufacturing a semiconductor. <P>SOLUTION: The exposure device has an electric discharge electrode 32, which excites laser gas by the electric discharge to output a laser beam from chamber 30, a laser light source 3 having a circulating means 34 which circulates laser gas within the chamber so that laser gas which passes through an electric discharge region of the electric discharge electrode circulates within the chamber and returns to the electric discharge region again; an exposure device body 1 which performs exposure using laser beam from the laser light source; and control means 2 and 31 which control the circulating means. The exposure device performs exposure job which exposes a plurality of substrates and sequentially operates the start and the end of the exposure job and the start of the following exposure job. The control means controls so that the gas circulation capability of the circulating means, from the start of the exposure job to the end, becomes higher than the gas circulation capability of the circulating means, from the end of the exposure job to the start of the following exposure job. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
