Semiconductor on insulator substrate and devices formed therefrom

摘要

A semiconductor on insulator (SOI) device is comprised of a layer of a dielectric material having a perovskite lattice, such as a rare earth scandate. The dielectric material is selected to have an effective lattice constant that enables growth of semiconductor material having a diamond lattice directly on the dielectric. Examples of the rare earth scandate dielectric include gadolinium scandate (GdScO₃), dysprosium scandate (DyScO₃), and alloys of gadolinium and dysprosium scandate (Gd_1-xDy_xScO₃).