发明名称 OPTICAL SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PROBLEM TO BE SOLVED: To solve the problem that Al breaks due to the level difference of an opening on the upper face of the forming region of a photodiode since step coverage of AI is bad when AI is used as a shielding film in the photodiode for blue laser. SOLUTION: In an optical semiconductor integrated circuit device, the opening is made in an insulating layer in the photodiode light receiving region, and a high melting metal layer covers the insulating layer as the shielding film. Since the high melting metal layer has good step coverage, the high melting metal layer does not break by the level difference of the opening on the upper face of the forming region of the photodiode. Thus, the problem is solved that the shielding film breaks when AI is used as the shielding film. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005286094(A) 申请公布日期 2005.10.13
申请号 JP20040097549 申请日期 2004.03.30
申请人 SANYO ELECTRIC CO LTD 发明人 TAKAHASHI TSUYOSHI;OKABE KATSUYA
分类号 H01L27/14;H01L31/105;(IPC1-7):H01L27/14 主分类号 H01L27/14
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