发明名称 |
Method for fabricating strained silicon-on-insulator structures and strained silicon-on insulator structures formed thereby |
摘要 |
A silicon-on-insulator (SOI) device and structure having locally strained regions in the silicon active layer formed by increasing the thickness of underlying regions of a buried insulating layer separating the silicon active layer from the substrate. The stress transferred from the underlying thickened regions of the insulating layer to the overlying strained regions increases carrier mobility in these confined regions of the active layer. Devices formed in and on the silicon active layer may benefit from the increased carrier mobility in the spaced-apart strained regions.
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申请公布号 |
US2005227498(A1) |
申请公布日期 |
2005.10.13 |
申请号 |
US20040814482 |
申请日期 |
2004.03.31 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
FURUKAWA TOSHIHARU;KOBURGER CHARLES W.III;SLINKMAN JAMES A. |
分类号 |
H01L21/336;H01L21/762;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01L21/469 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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