| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photoelectron integrated device, wherein a silicon substrate with an integrated circuit formed and an active layer, especially, a compound semiconductor layer comprising a laser oscillating portion are integrated. <P>SOLUTION: The device has a growth support layer 2 positioned on a silicon substrate 1, an ELO layer 3, consisting of a compound semiconductor layer formed by epitaxial lateral growth on the growth supporting layer and an active layer 4, which is positioned above the ELO layer and comprises an n-type layer and a p-type layer of the compound semiconductor. In the ELO layer, a window 2a which is a groove provided along the peripheral edge of the growth support layer is embedded, and is formed in the lateral direction on the growth support layer. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
