| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon seed crystal which suppresses slip dislocation when the crystal touches a source silicon melt in the process of pulling a silicon single crystal by CZ (Czochralski) method, which traps propagating dislocation and makes growth of a dislocation-free silicon single crystal possible while formation of a neck portion is not necessarily required, and to provide a method for manufacturing a silicon single crystal for improving productivity of a dislocation-free silicon single crystal ingot having a large diameter and large weight. SOLUTION: The seed crystal 1 has a diameter reduced portion 3 where the cross-sectional area of the crystal body 4 gradually decreases toward the top end 6, with the side face of the diameter reduced portion 3 formed into a rugged figure having a deep part of the recess with the depth larger than a half of the maximum diameter of the seed crystal. The top end 6 of the seed crystal 1 is brought into contact with a silicon melt and further the diameter reduced portion 3 is immersed to melt the rugged figure part 5, and then a silicon single crystal is pulled without forming a neck or after forming a neck having the same diameter as the seed crystal 1. COPYRIGHT: (C)2006,JPO&NCIPI
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