发明名称 |
Semiconductor memory device and manufacturing method for the same |
摘要 |
The present invention provides a semiconductor memory device including: a semiconductor substrate of a first conductivity type; and a memory cell including: (i) a columnar semiconductor portion formed on the substrate, (ii) at least two charge-storage layers formed around a periphery of the columnar semiconductor portion and divided in a direction vertical to the semiconductor substrate, and (iii) a control gate that covers at least a portion of charge-storage layers, wherein the memory cell is capable of holding two-bit or more data.
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申请公布号 |
US2005224847(A1) |
申请公布日期 |
2005.10.13 |
申请号 |
US20050084648 |
申请日期 |
2005.03.16 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
MASUOKA FUJIO;HORII SHINJI;TANIGAMI TAKUJI;YOKOYAMA TAKASHI |
分类号 |
H01L21/336;H01L21/8247;H01L27/115;H01L29/76;H01L29/788;H01L29/792;H01L29/94;H01L31/062;H01L31/113;H01L31/119;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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