发明名称 Stacked semiconductor device
摘要 A stacked semiconductor device has a substrate having a conductor pattern and a cavity. A first die is received in the cavity of the cavity of the substrate and is electrically connected to the conductor pattern via wires. An adhesive layer is printed on a top of the first die. A second die is stacked on the first die via the adhesive layer and is electrically connected to the conductor pattern via wires, and An insulating layer provided on the substrate, wherein the insulating layer cover the first die and the second die and has a portion thereof received in the cavity to bond the first die.
申请公布号 US2005224944(A1) 申请公布日期 2005.10.13
申请号 US20040822712 申请日期 2004.04.13
申请人 STACK DEVICES CORP. 发明人 BIAR JIN-CHYUNG;YAO WU-CHIANG;HUANG CHI-PANG
分类号 H01L21/68;H01L23/495;H01L25/065;(IPC1-7):H01L23/495 主分类号 H01L21/68
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