发明名称 |
Semiconductor device and manufacturing method of the same |
摘要 |
Provided is a technique of effectively removing a metallic element that has catalytic action in terms of the crystallization of a semiconductor film and remains in a semiconductor film obtained using the metallic element. With the technique of the present invention, to remove a catalytic element used to crystallize a semiconductor film having an amorphous structure, gettering is completed by forming a region or a semiconductor film, to which a rare gas element is added, and by having the catalytic element move to the formed region or semiconductor film.
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申请公布号 |
US2005227422(A1) |
申请公布日期 |
2005.10.13 |
申请号 |
US20050148288 |
申请日期 |
2005.06.09 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
NAKAMURA OSAMU;KAJIWARA MASAYUKI;YAMAZAKI SHUNPEI;OHNUMA HIDETO |
分类号 |
H01L21/322;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/32;H01L29/423;H01L29/49;H01L29/786;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/322 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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