发明名称 |
Sidewall spacer for semiconductor device and fabrication method thereof |
摘要 |
An offset spacer layer for an LDD ion implantation process is formed by blanket deposition without photolithography and dry etch processes. The offset spacer layer remaining on LDD regions during an ion implantation process prevents a substrate from silicon loss and dosage contamination and has densified characteristics to improve device reliability.
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申请公布号 |
US2005227446(A1) |
申请公布日期 |
2005.10.13 |
申请号 |
US20040821438 |
申请日期 |
2004.04.09 |
申请人 |
KAO RONG-HUI;TSAO CHANG-SHENG;CHEN YEN-MING;WU LIN-JUNE |
发明人 |
KAO RONG-HUI;TSAO CHANG-SHENG;CHEN YEN-MING;WU LIN-JUNE |
分类号 |
H01L21/265;H01L21/336;H01L21/8234;H01L27/088;H01L27/105;H01L29/78;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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