| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a compound semiconductor substrate, whereby semiconductor element deterioration in the electrical characteristics of which is less than that of prior arts is manufactured. <P>SOLUTION: The compound semiconductor substrate includes a p-n junction comprising a p-layer and an n-layer, and at least one InGap layer between the p-layer and the n-layer. The InGap layer is not ordered and its carrier concentration is lower than 1×10<SP>17</SP>cm<SP>-3</SP>. In the manufacturing method of the compound semiconductor substrate, the p-layer, the n-layer and the disordered InGap layer between the p-layer and the n-layer are grown on an original substrate. The disordered InGap layer is grown at a growing temperature range of 450°C or higher and 600°C or lower, by using a gas amount of trimethyl gallium (TMG), trimethyl indium (TMI), and phosphin, equivalent to the amount x within a range of 0.45≤x≤0.55 in the formula In<SB>x</SB>Ga<SB>1-x</SB>P. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
