发明名称 VERFAHREN UND VORRICHTUNG ZUR HERSTELLUNG VON HOCHQUALITATIVEN EINKRISTALLEN
摘要 In a method for growing a single crystal by bringing a seed crystal (4) into contact with a melt (2) of raw materials melted under heating in a crucible (1), a blade member (5) or a baffle member is disposed in the raw material melt (2) in the crucible (1) and a single crystal is grown by pulling up it with rotating the crucible (1) to thereby grow various single crystals including CLBO from the highly viscous raw material melt (2) as high quality and high performance crystals. <IMAGE>
申请公布号 DE60013451(T2) 申请公布日期 2005.10.13
申请号 DE2000613451T 申请日期 2000.05.22
申请人 JAPAN SCIENCE AND TECHNOLOGY AGENCY, KAWAGUCHI 发明人 SASAKI, TAKATOMO;MORI, YUSUKE;YOSHIMURA, MASASHI
分类号 C30B15/00;C30B15/30;C30B17/00;C30B29/22;C30B29/30 主分类号 C30B15/00
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