发明名称 |
Etching solution, etched article and method for etched article |
摘要 |
An etching solution which exhibits etching rates for both of a thermally oxidized film (THOX) and a boron-phosphorus-glass film (BPSG) of 10O Å/min or less at 25° C., and an etching rate ratio:etching rate for BPSG/etching rate for a thermally oxidized film (THOX) of 1.5 or less.
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申请公布号 |
US2005224459(A1) |
申请公布日期 |
2005.10.13 |
申请号 |
US20050142418 |
申请日期 |
2005.06.02 |
申请人 |
KEZUKA TAKEHIKO;SUYAMA MAKOTO;ITANO MITSUSHI |
发明人 |
KEZUKA TAKEHIKO;SUYAMA MAKOTO;ITANO MITSUSHI |
分类号 |
H01L21/308;C09K13/08;C23F1/16;H01L21/311;(IPC1-7):B44C1/22 |
主分类号 |
H01L21/308 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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