发明名称 |
Substrate processing device, substrate processing method, and developing device |
摘要 |
Rinsing nozzles 310 a to 310 e are moved on a wafer W while they are discharging rinsing solution 326 . At that point, discharging openings 317 a to 317 e are contacted to developing solution 350 coated on the wafer W or rinsing solution 326 on the wafer W. Thus, the impact against the wafer W can be suppressed. As a result, pattern collapse can be prevented. In addition, a front portion of the developing solution 350 can push away the developing solution 350.
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申请公布号 |
US2005223980(A1) |
申请公布日期 |
2005.10.13 |
申请号 |
US20040515635 |
申请日期 |
2004.12.07 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
AWAMURA TETSUTOSHI;KIBA YUKIO;TANAKA KEIICHI;OKUBO TAKAHIRO;NISHIKIDO SHUUICHI |
分类号 |
G03F7/30;H01L21/00;(IPC1-7):B05C5/00;B05B7/00;B05B9/06 |
主分类号 |
G03F7/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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