| 摘要 |
<P>PROBLEM TO BE SOLVED: To perform isolation with good yield in a short time by improving light extracting efficiency of a group III nitride compound semiconductor element formed on a substrate. <P>SOLUTION: Group III nitride compound semiconductor layers 2, 3 are laminated on a sapphire substrate 1, and an LED element is formed (A). A laser beam is adjusted by a diffraction optical element, and the semiconductor layer near a separating schedule line is removed by the laser beam whose diameter is about 30 μm (B). Next, dry etching is performed by plasma (C). A pressure sensitive adhesive sheet 8 is stuck on a wafer, and a scribe line 9 is put with a diamond scriber along a separating line (D). By performing breaking, a crack is expanded by using the scribe line 9 as a generation source position of a cutting plane, and the element is isolated (E). <P>COPYRIGHT: (C)2006,JPO&NCIPI |
