HIGH PERFORMANCE EMBEDDED DRAM TECHNOLOGY WITH STRAINED SILICON

摘要

Semiconductor devices are fabricated in a strained layer region and strained layer-free region of the same substrate. A first semiconductor device, such as a memory cell, e.g. a deep trench storage cell, is formed in a strained layer-free region of the substrate. A strained layer region is selectively formed in the same substrate. A second semiconductor device ( 66, 68, 70 ), such as an FET, e.g. an MOSFET logic device, is formed in the strained layer region.