发明名称 Potential detector and semiconductor integrated circuit
摘要 An integrated semiconductor circuit has a potential detector for detecting a potential boosted by a high voltage generator. One terminal of a first capacitor is connected to a potential detection terminal via a first switching device, the other terminal thereof being connected to a reference potential terminal. A terminal of a second capacitor is connected, via a second switching device, to a first node at which the first switching device and the first capacitor are connected, the other terminal thereof being connected to the reference potential terminal. A third switch is connected between a second node at which the second switching device and the second capacitor are connected and the reference potential terminal. A clock generator generates clock signals to simultaneously and periodically turn on the first and the third switching devices whereas turn on the second switch periodically in an opposite timing for the first and the third switching devices. A comparator compares a potential at the second node with a reference potential and outputs a detection signal when a potential at the potential detection terminal reaches a predetermined potential.
申请公布号 US6954101(B2) 申请公布日期 2005.10.11
申请号 US20030664917 申请日期 2003.09.22
申请人 发明人
分类号 G11C16/06;G05F3/02;G11C5/14;G11C11/407;G11C16/30;H01L21/822;H01L27/04;H01L31/072;H02J1/00;H02M3/07;(IPC1-7):G05F3/02 主分类号 G11C16/06
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