发明名称 Method of screening defects using low voltage IDDQ measurement
摘要 A method of screening defects includes steps of: (a) measuring a quiescent current at a first supply voltage for each of a plurality of devices; (b) measuring a quiescent current at a second supply voltage for each of the plurality of devices; (c) generating a plot of the quiescent current measured at the first supply voltage vs. the quiescent current measured at the second supply voltage for each of the plurality of devices; (d) determining a range of intrinsic variation of quiescent current in the plot; and (e) identifying any of the plurality of devices corresponding to a measurement plotted outside the range of intrinsic variation as defective.
申请公布号 US6954705(B2) 申请公布日期 2005.10.11
申请号 US20030602357 申请日期 2003.06.23
申请人 LSI LOGIC CORPORATION 发明人 BENWARE ROBERT
分类号 G01R31/30;(IPC1-7):G06F19/00 主分类号 G01R31/30
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