NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE THAT CAN BE FABRICATED WITH ERASURE UNIT MODIFIED,申请号KR20030069514-传众专利搜索

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发明名称	NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE THAT CAN BE FABRICATED WITH ERASURE UNIT MODIFIED
摘要
申请公布号	KR100520596(B1)	申请公布日期	2005.10.10
申请号	KR20030069514	申请日期	2003.10.07
申请人		发明人
分类号	G11C16/02;G11C16/16;G11C16/06;G11C16/08;G11C16/34;G11C17/00;(IPC1-7):G11C16/16	主分类号	G11C16/02
代理机构		代理人
主权项
地址

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