SUBSTRATE PROCESSING METHOD AND APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a substrate processing method and apparatus capable of polishing the metal film of a substrate in such a state that a native oxide on the metal film formed on the substrate is removed , and of realizing the uniform planarization of the substrate. SOLUTION: The substrate processing apparatus includes a processing unit for removing a native oxide of a metal that is formed on the surface of the metal film on a wafer W and polishing units 16 and 17 for performing chemical mechanical polishing of the metal film of the wafer W. The processing unit is a wet etching unit 14 using a chemical liquid capable of dissolving the native oxide of the metal or a dry etching unit 206 using a gas capable of reducing or etching the native oxide of the metal. COPYRIGHT: (C)2006,JPO&NCIPI