| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To increase the current and breakdown voltage of a semiconductor device while suppressing the increase of the on-resistance even when a semiconductor layer, in which an offset drain is formed, is formed on an insulator. <P>SOLUTION: The offset drain having a multi-RESURF structure is constituted in an elevated structure by respectively laminating an elevated offset drain layer 7a and a p-type elevated offset drain layer 7b upon an n-type offset drain layer 6a, and a p-type offset drain layer 6b formed on an SOI substrate. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
