| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of forming a resistance element superior in adhesiveness and uniformity of resistance by using a low-temperature process, and to provide its manufacturing method. SOLUTION: After depositing an underlayer 8, consisting of titanium nitride, polysilicon, or its substitute material by a sputtering method, a resistance element 10 with a laminated structure, is formed by depositing a tungsten silicide 9 with CVD. Since the adhesiveness between an interlayer oxide film 7 and the tungsten silicide 9 can be improved with this underlayer 8, the heat treatment at about 700°C or higher, in the case of forming tungsten silicide with the sputtering method becomes unnecessary, so that a low-temperature process can be applied. Furthermore, since the temperature of the heat treatment can be lowered to about 400°C or lower by forming the underlayer 8 with the sputtering method, the characteristics variation of a transistor can be controlled. COPYRIGHT: (C)2006,JPO&NCIPI
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