Integrated semiconductor circuit chip with DMOS power transistor structure has thick high current heat conductive metal layers between transistor and metal rails on chip surface

摘要

An integrated semiconductor circuit chip comprises at least one DMOS power transistor whose electrodes pass vertically to contact thick conductive metal rails (6,7) on the surface and comprise metallization planes giving thick high-current heat-conductive, HS-WL, layers (10-12) with large surface contact regions (A1-A3).