发明名称 Non-volatile semiconductor memory device, method for sub-block erase and electric device with the same
摘要 After execution of sub-block erase (S 2 ) for partly erasing a memory cell block, sub-block erase verify read is executed (S 4 ). As a result of the sub-block erase verify read, if the sub-block erase is completed, then terminate the sub-block erase (S 5 ). If otherwise the sub-block erase is not completed yet, then perform over-program verify read (S 6 ) to thereby determine whether the cause of an event that a sub-block erase-verify result becomes "Fail" due to the deficiency of erase or the presence of an over-programmed cell or cells. If the result of such over-program verify read is "Pass," then repeat execution of the sub-block erase verify read (S 2 ). When the over-program verify read (S 6 ) is "Fail," output a Fail result and then complete the operation (S 8 ).
申请公布号 US2005219909(A1) 申请公布日期 2005.10.06
申请号 US20050138427 申请日期 2005.05.27
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 FUTATSUYAMA TAKUYA;IMAMIYA KENICHI;HOSONO KOJI;SHIBATA NOBORU
分类号 G11C16/02;G11C16/04;G11C16/16;G11C16/34;(IPC1-7):G11C11/34 主分类号 G11C16/02
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