SINGLE CRYSTAL SILICON SENSOR WITH ADDITIONAL LAYER AND METHOD OF PRODUCING THE SAME
摘要
<p>A SOI-based MEMS device has a base layer, a device layer, and an insulator layer between the base layer and the device layer. The device also has a deposited layer having a portion that is spaced from the device layer. The device layer is between the insulator layer and the deposited layer.</p>
申请公布号
WO2005092782(A1)
申请公布日期
2005.10.06
申请号
WO2005US05103
申请日期
2005.02.17
申请人
ANALOG DEVICES, INC.;NUNAN, THOMAS, KIERAN;BROSNIHAN, TIMOTHY, J.
