| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To inhibit the influence of radiant heat to a substrate while maintaining the depositing speed of a thin film material at a high speed in a catalyst CVD method. <P>SOLUTION: A part 31 substantially densely constituted of a linear catalyst 3 used for a catalyst CVD and a part configured to a sparse part 32 are mixedly provided. The part 31 constituted densely is set at a distance from the substrate distantly from at least the part 32 configured to the sparse part. The catalyst 3 is heated to a high temperature. Gas as a raw material is supplied to the heated catalyst 3. A semiconductor thin film is formed of active species formed by decomposing a gas molecule on the front surface of the catalyst 3 and active species formed by the reaction of a higher order of the active species. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
