| 摘要 |
A trench is provided, which penetrates a channel layer between adjacent gate electrodes in a MOSFET, and a Schottky metal layer is provided in the trench. Accordingly, a bottom of the trench becomes a Schottky barrier diode. Thus, the Schottky barrier diode can be included in a diffusion region of the MOSFET. Consequently, miniaturization of the device and reduction in the number of components can be realized.
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