OXIDATION PROCESS OF A SIGE LAYER AND APPLICATIONS THEREOF

摘要

The invention concerns an oxidizing process for forming on the surface of a SiGe layer an oxidized region, said process comprising an oxidizing thermal treatment of the SiGe layer under an oxidizing atmosphere for oxidizing its surface, characterized in that said oxidizing thermal treatment is carried out at a low temperature in order to incorporate a maximum amount of Ge from said SiGe layer into the oxidized layer, said oxidized layer being thus made of SixGeyOz. The invention also concerns applications of such process, as well as SiGe layers and SGOI multilayer structures obtained by such process and applications.