| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method of an electron source in which the lower electrode can be patterned in cross-sectionally trapezoidal shape and the yield of manufacture can be made greater compared with the case of patterning the lower electrode using a lift-off method. <P>SOLUTION: After forming a conductive layer 12a composed of chromium film or chromium alloy film for a lower electrode on an insulating substrate 11, a resist layer 9 is formed on the conductive layer 12a (fig.(a)), then the conductive layer 12a is patterned by a wet etching process, thereby, the lower electrode 12 is formed (fig.(b)). Then, the resist layer 9 is removed (fig.(c)) and a non-doped polycrystalline silicon layer 3 is formed (fig.(d)), and out of the polycrystalline silicon layer 3, the portion overlapping with the lower electrode 12 is nano-crystallized and oxidized, thereby, an intense-field drift layer 6 is formed, then, an insulating layer 8 with an opening for the forming planned portion of a surface electrode 7 is formed and the surface electrode 7 is finally formed (fig.(e)). <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
