NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE AND FABRICATION METHOD THEREOF,申请号KR20040021253-传众专利搜索

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发明名称	NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE AND FABRICATION METHOD THEREOF
摘要
申请公布号	KR20050096010(A)	申请公布日期	2005.10.05
申请号	KR20040021253	申请日期	2004.03.29
申请人	SAMSUNG ELECTRO-MECHANICS CO., LTD.	发明人	RYU, YUNG HO;OH, BANG WON;YANG, KEE JEONG;PARK, JIN SUB
分类号	H01L33/14;(IPC1-7):H01L33/00	主分类号	H01L33/14
代理机构		代理人
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