发明名称 MIXED TECHNOLOGY MEMS/SIGE BICMOS DIGITIZING ANALOG FRONT END WITH DIRECT RF SAMPLING
摘要 A digitizing analog front end (DAFE) (50) using mixed technology on a single substrate is described. SiGe BiCMOS technology is implemented for the semiconductor components, which include a low noise amplifier (64) and an analog-to-digital converter (68). Micro Electro Mechanical System (MEMS) switches are used to change the filtering characteristics of several filters, including an anti-aliasing filter (66) and a pre-select and anti-jamming filter (62).
申请公布号 KR20050096163(A) 申请公布日期 2005.10.05
申请号 KR20057013866 申请日期 2005.07.27
申请人 RAYTHEON COMPANY 发明人 KENT SAMUEL D.;LINDER LLOYD F.;CAI KHIEM V.
分类号 H01H1/00;H04B1/10;(IPC1-7):H04B1/10;H01H59/00 主分类号 H01H1/00
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