发明名称 |
ESD protection circuit for high-voltage, high DV/DT pads |
摘要 |
A pad that experiences a high-voltage, high dV/dT signal during normal operation is prevented from falsely triggering by utilizing a bipolar transistor connected to the pad to provide ESD protection, and a MOS transistor connected to the bipolar transistor to turn off the bipolar transistor during normal circuit operation.
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申请公布号 |
US6952333(B1) |
申请公布日期 |
2005.10.04 |
申请号 |
US20030662607 |
申请日期 |
2003.09.15 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
FARRENKOPF DOUGLAS ROBERT |
分类号 |
H02H9/00;H02H9/04;(IPC1-7):H02H9/00 |
主分类号 |
H02H9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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