Manufacturing method of semiconductor device having low resistance gate electrode,申请号KR19990010074-传众专利搜索

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发明名称	Manufacturing method of semiconductor device having low resistance gate electrode
摘要
申请公布号	KR100518527(B1)	申请公布日期	2005.10.04
申请号	KR19990010074	申请日期	1999.03.24
申请人		发明人
分类号	H01L21/31;(IPC1-7):H01L21/31	主分类号	H01L21/31
代理机构		代理人
主权项
地址

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