| 摘要 |
There is provided a method of manufacturing a substrate having a partial insulating layer under a semiconductor layer. A partial SOI substrate ( 40 ) is obtained by performing steps of forming the first substrate which has a separation layer, the first semiconductor layer ( 13 ) on the separation layer, a partial insulating layer ( 14 a) on the first semiconductor layer ( 13 ), and second semiconductor layers ( 15 b, 16 b) on the first semiconductor layer ( 13 ) exposed in the partial insulating layer ( 14 a) and partial insulating layer ( 14 a), bonding the second substrate ( 20 ) to the second semiconductor layers ( 15 b, 16 b) on the first substrate to form a bonded substrate stack, and splitting the bonded substrate stack at the separation layer.
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