发明名称 Single crystal, dual wafer, tunneling sensor or switch with substrate protrusion and a method of making same
摘要 A method of making a micro electromechanical switch or tunneling sensor. A cantilevered beam structure and a mating structure are defined on a first substrate or wafer; and at least one contact structure and a mating structure are defined on a second substrate or wafer, the mating structure on the second substrate or wafer being of a complementary shape to the mating structure on the first substrate or wafer. At least one of the mating structures includes a protrusion extending from a major surface of at least one of said substrates. A bonding layer, preferably a eutectic bonding layer, is provided on at least one of the mating structures. The mating structure of the first substrate is moved into a confronting relationship with the mating structure of the second substrate or wafer. Pressure is applied between the two substrates so as to cause a bond to occur between the two mating structures at the bonding or eutectic layer. Then the first substrate or wafer is removed to free the cantilevered beam structure for movement relative to the second substrate or wafer.
申请公布号 US6951768(B2) 申请公布日期 2005.10.04
申请号 US20030370124 申请日期 2003.02.18
申请人 HRL LABORATORIES, LLC 发明人 KUBENA RANDALL L.;CHANG DAVID T.
分类号 G01P9/00;B81B3/00;B81C1/00;B81C3/00;G01C19/56;G01P9/04;H01H1/00;H01H59/00;(IPC1-7):H01L21/00 主分类号 G01P9/00
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