| 摘要 |
PROBLEM TO BE SOLVED: To provide a bidirectional photo-thyristor chip capable of improving optical sensitivity, commutation property having a trade-off relationship therewith and critical OFF voltage increase rate dv/dt property. SOLUTION: Two operating channels CH1, CH2 of a bidirectional photo-thyristor chip 31 are disposed separately from each other so as not to cross each other. A channel separation area 29 composed of an oxygen dope semi-insulating multicrystal silicon film 35a wherein phosphorous is doped, is formed between a left-side p gate diffusion area 23 and a right-side p gate diffusion area 23' on an n-type silicon substrate, and between the CH1 and the CH2. Therefore, a silicon interface level (Qss) near the channel separation area 29 on a front surface of the n-type silicon substrate increases, and holes that are a minority carriers inside the n-type silicon substrate are extinguished in the area. As a result, a commutation failure can be prevented that the CH2 is turned on although there is no light incidence if a voltage of an inverse phase is applied to the side of the CH2 when the CH1 is turned off, so that commutation property can be improved. COPYRIGHT: (C)2005,JPO&NCIPI |
