发明名称 |
Device structure of ferroelectric memory and nondestructive reading method |
摘要 |
A method for reading a nondestructive readout type ferroelectric memory device including a process in which 1-bit data is written in a pair of a cell for storage and a cell for reference disposed in series in the ferroelectric memory device, and a process in which a response obtained when a pulse is impressed to the 1-bit data written in the pair of a cell for storage and a cell for reference is resonated by a resonant circuit with a specified resonance frequency provided at a readout side to thereby output an output signal to be nondestructively readout.
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申请公布号 |
US2005213364(A1) |
申请公布日期 |
2005.09.29 |
申请号 |
US20050089365 |
申请日期 |
2005.03.24 |
申请人 |
KIJIMA TAKESHI;HAMADA YASUAKI |
发明人 |
KIJIMA TAKESHI;HAMADA YASUAKI |
分类号 |
G11C7/00;G11C11/22;H01L21/8246;H01L27/10;H01L27/105;(IPC1-7):G11C11/22 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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