| 摘要 |
Provided are a GaN-based III-V group compound semiconductor light emitting device and a method of fabricating the GaN-based III-V group compound semiconductor light emitting device. The GaN-based III-V group compound semiconductor light emitting device includes: at least an n-type compound semiconductor layer, an active layer, and a p-type compound semiconductor layer, which are disposed between an n-type electrode and a p-type electrode. The p-type electrode includes a first electrode layer which is formed of Ag or an Ag-alloy on the p-type GaN-based compound semiconductor layer and a second electrode which is formed of at least one selected from the group consisting of Ni, Ni-alloy, Zn, Zn-alloy, Cu, Cu-alloy, Ru, Ir, and Rh on the first electrode layer.
|
