发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR FILM, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, INTEGRATED CIRCUIT, ELECTRIC OPTICAL DEVICE AND ELECTRONIC EQUIPMENT |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor film for improving the characteristics of elements such as a thin film transistor at the time of forming a semiconductor film by carrying out melting and crystallization using micropores. SOLUTION: This method for manufacturing a semiconductor film comprises a micropore formation process for forming a micropore (14) in an insulating film (12) formed on a substrate (10); a first film formation process for forming a non-single crystal semiconductor film (16) in the micropore and on the insulating film; a melting and crystallizing process for melting and crystallizing the non-single crystal semiconductor film, and for forming a first crystal semiconductor film (18) with the micropore as almost a center; and a second film formation process for forming a second crystal semiconductor film (20) by epitaxially growing the semiconductor on the first crystal semiconductor film. COPYRIGHT: (C)2005,JPO&NCIPI
|
申请公布号 |
JP2005268441(A) |
申请公布日期 |
2005.09.29 |
申请号 |
JP20040076808 |
申请日期 |
2004.03.17 |
申请人 |
SEIKO EPSON CORP |
发明人 |
SHIMADA HIROYUKI |
分类号 |
H01L51/50;C30B29/06;C30B29/52;H01L21/20;H01L21/205;H01L21/336;H01L29/786;H05B33/14;(IPC1-7):H01L21/20 |
主分类号 |
H01L51/50 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|